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symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v 54 i d @ t c = 100c continuous drain current, v gs @ 10v 38 a i dm pulsed drain current 210 p d @t c = 25c maximum power dissipation 71 w p d @t a = 25c maximum power dissipation 3.8 w linear derating factor 0. 48 w/c t j , t stg junction and storage temperature range -55 to + 175 c www.irf.com 1 irlr3715pbf irlu3715pbf smps mosfet hexfet power mosfet notes through are on page 10 absolute maximum ratings thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.1 r ja junction-to-ambient ??? 110 c/w r ja junction-to-ambient (pcb mount) ??? 50 applications benefits ultra-low gate impedance very low r ds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for computer processor power v dss r ds(on) max i d 20v 14m ? 54a d-pak i-pak irlr3715 irlu3715 lead-free
irlr/u3715pbf 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed sourc e current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.9 1.3 v t j = 25c, i s = 21a, v gs = 0v ??? 0.8 ??? t j = 125c, i s = 21a, v gs = 0v t rr reverse recovery time ??? 37 56 ns t j = 25c, i f = 21a, v r =20v q rr reverse recovery charge ??? 28 42 nc di/dt = 100a/s t rr reverse recovery time ??? 38 57 ns t j = 125c, i f = 21a, v r =20v q rr reverse recovery charge ??? 30 45 nc di/dt = 100a/s dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 110 mj i ar avalanche current ??? 21 a avalanche characteristics s d g diode characteristics 54 210 symbol parameter min. typ. max. units conditions g fs forward transconductance 26 ??? ??? s v ds = 10v, i d = 21a q g total gate charge ??? 11 17 i d = 21a q gs gate-to-source charge ??? 3.8 ??? nc v ds = 10v q gd gate-to-drain ("miller") charge ??? 4.4 ??? v gs = 4.5v q oss output gate charge ??? 11 17 v gs = 0v, v ds = 10v t d(on) turn-on delay time ??? 6.4 ??? v dd = 10v t r rise time ??? 73 ??? i d = 21a t d(off) turn-off delay time ??? 12 ??? r g = 1.8 ? t f fall time ??? 5.1 ??? v gs = 4.5v c iss input capacitance ??? 1060 ??? v gs = 0v c oss output capacitance ??? 700 ??? v ds = 10v c rss reverse transfer capacitance ??? 120 ??? pf ? = 1.0mhz v sd diode forward voltage parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c reference to 25c, i d = 1ma ??? 11 14 v gs = 10v, i d = 26a ??? 15 20 v gs = 4.5v, i d = 21a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 16v, v gs = 0v ??? ??? 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 16v gate-to-source reverse leakage ??? ??? -200 na v gs = -16v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m ?
irlr/u3715pbf www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 4.5v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 52a
irlr/u3715pbf 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 0 5 10 15 20 25 0 2 4 6 8 10 12 14 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 21a v = 10v ds v = 16v ds 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
irlr/u3715pbf www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d limited by package
irlr/u3715pbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as 25 50 75 100 125 150 175 0 40 80 120 160 200 240 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 8.5a 15a 21a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
irlr/u3715pbf www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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irlr/u3715pbf 8 www.irf.com

12 in the assembly line "a" ass embled on ww 16, 1999 example: wi t h as s e mb l y t his is an irf r120 lot code 1234 year 9 = 1999 dat e code we e k 16 part number logo int ernat ional rectifier assembly lot code 916a irf u120 34 year 9 = 1999 dat e code or p = de s i gn at e s l e ad- f r e e product (optional) note: "p" in as sembly line pos ition i ndicates "l ead- f r ee" 12 34 we e k 16 a = assembly site code part number irfu120 line a logo lot code assembly international rectifier
irlr/u3715pbf www.irf.com 9

assembly example: with assembly this is an irfu120 year 9 = 1999 dat e code line a week 19 in the assembly line "a" as s embled on ww 19, 1999 lot code 5678 part number 56 irf u120 international logo rectifier lot code 919a 78 note: "p" in assembly line position indicates "lead-free" 56 78 assembly lot code rect ifier logo int ernat ional irfu120 part number we e k 19 dat e code year 9 = 1999 a = assembly site code p = de s i gn at e s l e ad- f r e e product (optional)
irlr/u3715pbf 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/04 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.51mh r g = 25 ? , i as = 21a,v gs =10v pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a.
when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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